RANDOM ACCESS MEMORY BASED IN FERROMAGNETIC INSULATOR AND SUPERCONDUCTOR HETEROJUNCTIONS (PROXIMITY RAM)
The present invention consists of a device consisting of a matrix of random access memory cells (RAM) to be used for quantum and classical computers. Each cell consists of a FI-S-I-S-FI stack, where FI is a ferromagnetic insulator, S is a superconductor and I is a tunnel barrier. These devices exploit two combined physical effects: the magnetic proximity effect and the absolute spin valve effect.
• Dep Italy n. IT 102017000107007
• PCT extension n.PCT/EP2018/072826
https://brevetti.cnr.it/InfoCatalogo.do?nsrif=10550&dip=0
YEAR: 2018
APPLICATIONS
- The identification of reliable memory devices for superconducting computers. These emerging technologies require a drastic reduction in energy consumption and dissipated heat, which is one of the main limiting factors in current computing technologies.
- Identification of simple structures compatible with production technologies. The structural complexity makes some of the currently available options invalid.
- Improve the density of integration. Higher densities allow more memory to be available in the same space, increasing the overall computing performance.
INVENTORS
GIAZOTTO FRANCESCO
STRAMBINI ELIA
DE SIMONI GIORGIO
Bergeret Sebastian
Bergeret Babaro
PATENT OWNERSHIP
- National Research Council (Italy) (48%)
- Spanish National Research Council (Spain) (42%)
- University of the Basque Country (Spain) (10%)