02.12.2021NANO COLLOQUIA S3 Avinash Vikatakavi
Date and Time: December 2, 2021 - 15.00 ONLINE
25.11.2021Producing electricity from heat losses: engineered in Pisa the first device capable of achieving it in a controlled manner
It is now possible to create a new generation of “smart” thermoelectric systems to generate clea...
23.11.2021il progetto RIMMEL @ MECSPE - Bologna 2021
Si svolgerà martedì 23 novembre, dalle 16.45 alle 17.45 (Sala Concerto c/o Centro Servizi – Bolo...
19.11.2021Graphene as a solid lubricant becomes super-slippery
Cnr Nano researchers in collaboration with Sussex University and Rice University studied the frictio...
17.11.2021International Workshop on Advanced Materials-to-Device Solutions for Synaptic Electronics
CNR Nano and ICN2 organized the
03.11.2021The RIMMEL Project @ l'Europa è qui 2021 – VOTE THE VIDEO ONLINE
The RIMMEL project enters the “Europe is here ...
11.10.2021Quantum computers become an experimental physics laboratory
A quantum computer is a machine designed to do calculations. Now a group of physicists from CnrNano,...
05.10.20212021 Nobel Prize for the discoveries on TRPV1 and PIEZO receptors
The seminal discoveries by this year’s Nobel Laureates have explained how heat, cold and touch can...
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- 20.05.2021 - FIM-S3 SEMINAR - Dr Thibault SohierDate and Time: Thursday May 20th, 2021 - 16:00 (SHARP) Link (Google Meet): https://meet.google.com/yud-upbp-mno Speaker: Dr Thibault Sohier - University of Liège (Belgium) Title: Electron-phonon interactions in transition metal dichalcogenides. Effects of doping and valley structure Abstract: Owing to the multi-valley and spin-textured nature of their electronic structure, semiconducting transition-metal dichalcogenides (TMDs) offer the possibility for a combined manipulation of charge, spin, and valley degrees of freedom, leading to fascinating fundamental physics and technological prospects. Charge, spin and valley transport all depend on the scattering of carriers by phonons. In parallel, further control of those degrees of freedom is often achieved via electrostatic doping. Thus, it is essential to understand the interplay between electronic structure, doping and electron-phonon interactions in TMDs. Density functional theory and analytical models are used to build an extensive and predictive model of electron-phonon scattering as a function of valley structure and doping. Intervalley scattering depends on doping mostly via the position of the Fermi level with respect to the different valleys and the associated energy selection rules. Intravalley scattering, however, displays a rather complex doping dependency via two kinds of electronic screening depending on the phonon perturbation. The first is the standard free carrier screening which reduces the coupling as carrier density increases. In contrast, the second surprisingly leads to an enhanced electron-phonon interaction at high doping, when multiple valleys are occupied. The impact of those mechanisms on the physical properties of TMDs is illustrated by computing the mobility of semiconducting TMDs and showing large variations as a function of doping and valley structure. Host:Marco Gibertini (FIM, UNIMORE) and Claudia Cardoso (S3, CNR-NANO) Flyer