CNR NANO - Istituto Nanoscienze Consiglio Nazionale delle Ricerche

- 17.02.2020 - S3 SEMINAR Francesco Rossella
Date and Time: Monday February 17, 2020 - 12:00
Venue: S3 Seminar Room, Third Floor, Physics Building, FIM Department

Speaker: Francesco Rossella
NEST Laboratory, Scuola Normale Superiore and Istituto Nanoscienze-CNR (IT)

Title: Engineering electronic functionalities in nanowire-based devices: advantages from heterostructuring and electrostatic doping

Abstract: Semiconductor nanowires and nanowire heterostructures provide a formidable playground for nanoscience and nanotechnology at large, allowing to enable unprecedented device functionalities, that find countless applications spanning from quantum computation-technologies and sensing to energy harvesting and machine learning. We build on the epitaxial growth of III-V semiconductor nanowires, and demonstrate prototypical nanowire-based devices that use different strategies for the electrostatic doping of the nanostructures. Electronic confinement in InP-InAs nanowire quantum dots is exploited for thermoelectric conversion [1] and to enable single electron transistors coupled to microwaves [2]. Broken-gap InAs-GaSb core-shell nanowires allow to implement Esaki tunnel diodes [3] and open new perspectives for studying the physics of interacting electrons and holes at the nanoscale. Electric double layer transistors based on InAs nanowires gated by ionic liquids [4] enable the simultaneous gate-control of electrical conductivity and measurement of thermal conductivity in device architectures with suspended nanostructures [5].

References:

[1] D. Prete, et al., Thermoelectric response at high temperature in nanowire quantum dots, Nano Lett. 19, 3033?3039 (2019)

[2] S. Cornia, et al., Microwave Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots, Scientific Report, 19523 (2019)

[3] M. Rocci, et al., Tunable Esaki effect in catalyst-free InAs/GaSb core-shell nanowires, Nano Letters 16, 7950–7955 (2016)

[4] J. Lieb, et al., Ionic liquid gating of InAs nanowire-based field effect transistors, Adv. Funct. Mater. 1804378 (2019) [5] M. Rocci, et al, Suspended nanowire devices for thermal conductivity measurements using the 3?-method, J. Mater. Eng. Perform. 27, 6299–6305 (2018)

Host: Marco Affronte, email: marco.affronte@unimore.it