02.12.2021NANO COLLOQUIA S3 Avinash Vikatakavi
Date and Time: December 2, 2021 - 15.00 ONLINE
25.11.2021Producing electricity from heat losses: engineered in Pisa the first device capable of achieving it in a controlled manner
It is now possible to create a new generation of “smart” thermoelectric systems to generate clea...
23.11.2021il progetto RIMMEL @ MECSPE - Bologna 2021
Si svolgerà martedì 23 novembre, dalle 16.45 alle 17.45 (Sala Concerto c/o Centro Servizi – Bolo...
19.11.2021Graphene as a solid lubricant becomes super-slippery
Cnr Nano researchers in collaboration with Sussex University and Rice University studied the frictio...
17.11.2021International Workshop on Advanced Materials-to-Device Solutions for Synaptic Electronics
CNR Nano and ICN2 organized the
03.11.2021The RIMMEL Project @ l'Europa è qui 2021 – VOTE THE VIDEO ONLINE
The RIMMEL project enters the “Europe is here ...
11.10.2021Quantum computers become an experimental physics laboratory
A quantum computer is a machine designed to do calculations. Now a group of physicists from CnrNano,...
05.10.20212021 Nobel Prize for the discoveries on TRPV1 and PIEZO receptors
The seminal discoveries by this year’s Nobel Laureates have explained how heat, cold and touch can...
home
- 08.11.2018 - COLLOQUIA 2018 S3 SEMINARDate and Time: Thursday November 8, 2018 - 15.00 Venue: S3 Seminar Room, Third Floor, Physics Building, FIM Department Speaker: Seyedeh Samaneh Ataei Title: Excitonic insulator in transition metal dichalcogenides (TMDs) Abstract:We study the pressure induced electronic phase transition in bulk 2H-MoS2, an indirect gap layered material. By using accurate ab initio calculations based on the combined many body perturbation theory and density functional theory we calculate the exciton dispersion at different applied pressures showing that an excitonic instability appears at the pressure of 34 GPa, where the indirect electronic band gap is almost closed and the lowest indirect exciton present a binding energy of about 30 meV. The calculated pressure induced electronic band gap closure is well in line with the estimated metallisation onset (about 35-40 GPa) reported in previous theoretical and experimental results for this material. Our results give promising insights about the occurrence of a pure electronic instability and the realization of an excitonic insulator for a pressure slightly above the occurrence of the the pressure induced transition to metallic phase of bulk 2H- MoS2. Host: Massimo Rontani